John E. Ayers, Tedi Kujofsa, Paul Rago, Johanna Raphael

Heteroepitaxy of Semiconductors (eBook, PDF)

Theory, Growth, and Characterization, Second Edition

• Format: PDF

Produktbeschreibung

In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.

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Produktdetails

• Verlag: Taylor & Francis eBooks
• Seitenzahl: 659
• Erscheinungstermin: 3. Oktober 2016
• Englisch
• ISBN-13: 9781482254365
• Artikelnr.: 46758020

Autorenporträt

J.E. Ayers, T. Kujofsa, P.B. Rago, and J.E. Raphael are all members of the Semiconductor Materials Research Group at the University of Connecticut, Storrs, USA.

Inhaltsangabe

Introduction. Properties of Semiconductors. Heteroepitaxial Growth. Surface
and Chemical Considerations in Heteroepitaxy. Mismatched Heteroepitaxial
Growth and Strain Relaxation: I. Uniform Layers. Mismatched Heteroepitaxial
Growth and Strain Relaxation: II. Graded Layers and Multilayered
Structures. Characterization of Heteroepitaxial Layers. Defect Engineering
in Heteroepitaxial Material. Metamorphic Devices.