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  • Broschiertes Buch

As modern wireless communication technology evolves, RF power amplifiers (PAs) becomes a hot issue, because they are the key component of wireless mobile communication systems and the communication quality strongly depends on performance of the RF PAs. Modern wireless communication systems such as CDMA2000, WCDMA, OFDM, and so on, are intended to maximize data rate in a fast moving environment. The modulated signals of these systems require both good linearity and efficiency while the signals have a high peak to average power ratio. So the linearity and efficiency are two the most important…mehr

Produktbeschreibung
As modern wireless communication technology evolves, RF power amplifiers (PAs) becomes a hot issue, because they are the key component of wireless mobile communication systems and the communication quality strongly depends on performance of the RF PAs. Modern wireless communication systems such as CDMA2000, WCDMA, OFDM, and so on, are intended to maximize data rate in a fast moving environment. The modulated signals of these systems require both good linearity and efficiency while the signals have a high peak to average power ratio. So the linearity and efficiency are two the most important characteristics of PAs for wireless applications. Recently, increasing numbers of RF components are being integrated using the CMOS process to meet the requirements of low cost and small size in wireless consumer markets. However, the CMOS power amplifier is difficult to design because of the low breakdown voltage, conductive Si substrate and lack of ground via. All make design of a full-integrated PA extremely challenging. This book focuses on efficiency enhancement and linearization techniques for CMOS power amplifiers design.
Autorenporträt
Dr. Chenxi Zhao erhielt 2014 seinen Doktortitel von der Universität für Wissenschaft und Technologie Pohang. Seit 2014 ist er Dozent an der Universität für elektronische Wissenschaft und Technologie in China. Zu seinen Hauptforschungsinteressen gehören die Modellierung von HF-CMOS-Bauteilen, CMOS-HF-Transceiver und Leistungsverstärkerdesign für Millimeterwellenanwendungen.