Advanced Silicon & Semiconducting Silicon-Alloy Based Materials & Devices
Herausgeber: Nijs, Jo
Advanced Silicon & Semiconducting Silicon-Alloy Based Materials & Devices
Herausgeber: Nijs, Jo
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One of the first books to cover advanced silicon-based technologies, this volume presents important directions for research into silicon, its alloy-based semiconducting devices, and its development in commercial applications.
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One of the first books to cover advanced silicon-based technologies, this volume presents important directions for research into silicon, its alloy-based semiconducting devices, and its development in commercial applications.
Produktdetails
- Produktdetails
- Verlag: CRC Press
- Seitenzahl: 488
- Erscheinungstermin: 11. September 2019
- Englisch
- Abmessung: 234mm x 156mm x 26mm
- Gewicht: 734g
- ISBN-13: 9780367402174
- ISBN-10: 0367402173
- Artikelnr.: 57780642
- Herstellerkennzeichnung
- Libri GmbH
- Europaallee 1
- 36244 Bad Hersfeld
- gpsr@libri.de
- Verlag: CRC Press
- Seitenzahl: 488
- Erscheinungstermin: 11. September 2019
- Englisch
- Abmessung: 234mm x 156mm x 26mm
- Gewicht: 734g
- ISBN-13: 9780367402174
- ISBN-10: 0367402173
- Artikelnr.: 57780642
- Herstellerkennzeichnung
- Libri GmbH
- Europaallee 1
- 36244 Bad Hersfeld
- gpsr@libri.de
Jonas F. A. Nijs
Preface. Introduction. Part one: Sincle crystalline silicon and its alloys.
Heavy doping effects in silicon (P/Van Miegham and R P Mertens). Defects in
crystalline silicon (C Claeys and J Vanhellemont). Molecular beam epitaxy
of silicon, silicon alloys and metals (E Kasper and C M Falco). Low thermal
budget chemical vapour deposition techniques for Si and SiGe (M R Caymax
and W Y Leong). Materials properties of (strained) SiGe layers (J
Poortmans, S C Jain, J Nijs and R Van Overstraeten). SiGe heterojunction
bipolar application (J Poortmans, S C Jain And J Nijs). Field-effect
transistors, infrared detectors, and resonant tunneling devices in
silicon/silicon-germanium and ^D*d-doped silicon (M Willander). Crystalline
silicon-carbide and its applications (T Sugii). Part Two: Polycrystalline
silicon. Large Grain Polysilicon Substrates for Solar Cells, Properties,
analysis and modelling of polysilicon TFTs (P Migliorato and M Quinn).
Application and Technology of polysilicon thin film transistors for liquid
crystal displays. (C Baert) The use of polycrystalline silicon and its
alloys in VLSI applications (M Y Ghannam). Biographical details. Keyword
index.
Heavy doping effects in silicon (P/Van Miegham and R P Mertens). Defects in
crystalline silicon (C Claeys and J Vanhellemont). Molecular beam epitaxy
of silicon, silicon alloys and metals (E Kasper and C M Falco). Low thermal
budget chemical vapour deposition techniques for Si and SiGe (M R Caymax
and W Y Leong). Materials properties of (strained) SiGe layers (J
Poortmans, S C Jain, J Nijs and R Van Overstraeten). SiGe heterojunction
bipolar application (J Poortmans, S C Jain And J Nijs). Field-effect
transistors, infrared detectors, and resonant tunneling devices in
silicon/silicon-germanium and ^D*d-doped silicon (M Willander). Crystalline
silicon-carbide and its applications (T Sugii). Part Two: Polycrystalline
silicon. Large Grain Polysilicon Substrates for Solar Cells, Properties,
analysis and modelling of polysilicon TFTs (P Migliorato and M Quinn).
Application and Technology of polysilicon thin film transistors for liquid
crystal displays. (C Baert) The use of polycrystalline silicon and its
alloys in VLSI applications (M Y Ghannam). Biographical details. Keyword
index.
Preface. Introduction. Part one: Sincle crystalline silicon and its alloys.
Heavy doping effects in silicon (P/Van Miegham and R P Mertens). Defects in
crystalline silicon (C Claeys and J Vanhellemont). Molecular beam epitaxy
of silicon, silicon alloys and metals (E Kasper and C M Falco). Low thermal
budget chemical vapour deposition techniques for Si and SiGe (M R Caymax
and W Y Leong). Materials properties of (strained) SiGe layers (J
Poortmans, S C Jain, J Nijs and R Van Overstraeten). SiGe heterojunction
bipolar application (J Poortmans, S C Jain And J Nijs). Field-effect
transistors, infrared detectors, and resonant tunneling devices in
silicon/silicon-germanium and ^D*d-doped silicon (M Willander). Crystalline
silicon-carbide and its applications (T Sugii). Part Two: Polycrystalline
silicon. Large Grain Polysilicon Substrates for Solar Cells, Properties,
analysis and modelling of polysilicon TFTs (P Migliorato and M Quinn).
Application and Technology of polysilicon thin film transistors for liquid
crystal displays. (C Baert) The use of polycrystalline silicon and its
alloys in VLSI applications (M Y Ghannam). Biographical details. Keyword
index.
Heavy doping effects in silicon (P/Van Miegham and R P Mertens). Defects in
crystalline silicon (C Claeys and J Vanhellemont). Molecular beam epitaxy
of silicon, silicon alloys and metals (E Kasper and C M Falco). Low thermal
budget chemical vapour deposition techniques for Si and SiGe (M R Caymax
and W Y Leong). Materials properties of (strained) SiGe layers (J
Poortmans, S C Jain, J Nijs and R Van Overstraeten). SiGe heterojunction
bipolar application (J Poortmans, S C Jain And J Nijs). Field-effect
transistors, infrared detectors, and resonant tunneling devices in
silicon/silicon-germanium and ^D*d-doped silicon (M Willander). Crystalline
silicon-carbide and its applications (T Sugii). Part Two: Polycrystalline
silicon. Large Grain Polysilicon Substrates for Solar Cells, Properties,
analysis and modelling of polysilicon TFTs (P Migliorato and M Quinn).
Application and Technology of polysilicon thin film transistors for liquid
crystal displays. (C Baert) The use of polycrystalline silicon and its
alloys in VLSI applications (M Y Ghannam). Biographical details. Keyword
index.







