Characterization of Wide Bandgap Power Semiconductor Devices - Wang, Fei (Professor, University of Tennessee, Knoxville, USA); Zhang, Zheyu (Lead Power Electronics Engineer, General Electric Glob; Jones, Edward A. (Senior Applications Engineer, Efficient Power Conv
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This book is an authoritative overview of Wide Bandgap (WBG) device characterization providing essential tools to assist the reader in performing both static and dynamic characterization of WBG devices, particularly those based on using silicon carbide (SiC) and gallium nitride (GaN) power semiconductors.

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Produktbeschreibung
This book is an authoritative overview of Wide Bandgap (WBG) device characterization providing essential tools to assist the reader in performing both static and dynamic characterization of WBG devices, particularly those based on using silicon carbide (SiC) and gallium nitride (GaN) power semiconductors.
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Autorenporträt
Fei (Fred) Wang is Professor of Electrical Engineering and Condra Chair of Excellence in Power Electronics, and Technical Director of NSF/DOE Engineering Research Center CURENT at The University of Tennessee, Knoxville, USA. He also holds a joint appointment with Oak Ridge National Lab. Prof. Wang has published over 400 journal and conference papers, authored 3 book chapters, and holds 15 US patents. He is a fellow of IEEE and NAI.