Current and Breakdown Voltages in 3C-SiC Lateral Power MOSFET - Kumar, Vivek
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Silicon carbide is the only WBG semiconductor that possesses a high-quality native oxide suitable for use as an MOS insulator in electronic devices. Thermal oxidation of SiC produces a layer of SiO2 on the surface, while the carbon atoms from the SiC form CO, which escapes as a gas. Thus it is possible to make all the devices found in silicon IC technology in SiC, including high quality, stable MOS transistors and MOS integrated circuits.

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Produktbeschreibung
Silicon carbide is the only WBG semiconductor that possesses a high-quality native oxide suitable for use as an MOS insulator in electronic devices. Thermal oxidation of SiC produces a layer of SiO2 on the surface, while the carbon atoms from the SiC form CO, which escapes as a gas. Thus it is possible to make all the devices found in silicon IC technology in SiC, including high quality, stable MOS transistors and MOS integrated circuits.
Autorenporträt
Dr. Vivek Kumar hat seinen Abschluss am CDCRI in Rajnandgaon gemacht und 2014 ein Postgraduiertenstudium in Parodontologie und oraler Implantologie in Lucknow abgeschlossen. Er verfügt über ausgezeichnete Kenntnisse in den Bereichen parodontale Lappenoperationen, Knochentransplantation und Weichgewebetransplantation. Er hat verschiedene nationale und internationale Veröffentlichungen vorzuweisen.