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Electrical characterization has been performed on p-type 4H-SiC implanted with Al or B to assess the activation efficiency and implantation-related damage recrystallization. The electrical technique of Temperature Dependent Hall Effect (TDHE) indicated that Al and B act as shallow acceptors in 4H-SiC with ionization energies of 252 and 285 meV, respectively. However, the deeper B level (600 meV) was not observed. Measurements of the electrically active concentration of most samples indicated electrical activation efficiency much greater than 100% for anneal temperatures of 1550 oC, 1650 oC, and 1750 oC. The samples used were low doped (NA - ND = 5x1015 cm-3) epitaxial p-type layers grown by MOCVD. They were implanted at room and high temperature (500 oC). The -p-layer was grown on low doped epitaxial n-type material to electrically isolate it. The n-type layer was in turn grown on heavily doped n-type substrate material. To help in forming good ohmic contacts, the samples had a high fluence shallow implantation (Al 50 keV) done on the samples' corners. This work has been selected by scholars as being culturally important, and is part of the knowledge base of civilization as we know it. This work was reproduced from the original artifact, and remains as true to the original work as possible. Therefore, you will see the original copyright references, library stamps (as most of these works have been housed in our most important libraries around the world), and other notations in the work. This work is in the public domain in the United States of America, and possibly other nations. Within the United States, you may freely copy and distribute this work, as no entity (individual or corporate) has a copyright on the body of the work. As a reproduction of a historical artifact, this work may contain missing or blurred pages, poor pictures, errant marks, etc. Scholars believe, and we concur, that this work is important enough to be preserved, reproduced, and made generally available to the public. We appreciate your support of the preservation process, and thank you for being an important part of keeping this knowledge alive and relevant.