Pavel P. Konorov, Adil M. Yafyasov, Vladislav B. Bogevolnov

Field Effect in Semiconductor-Electrolyte Interfaces

Application to Investigations of Electronic Properties of Semiconductor Surfaces

• Gebundenes Buch

Produktbeschreibung

Presents an understanding of semiconductor-electrolyte interfaces. This is a study of semiconductor-electrolyte interfacial effects, focusing on the physical and electrochemical foundations that affect surface charge, capacitance, conductance, quantum effects, and other properties, both from the point of view of theoretical modeling and metrology.

Produktdetails

• Verlag: Princeton University Press
• Seitenzahl: 192
• Erscheinungstermin: 3. Oktober 2006
• Englisch
• Abmessung: 240mm x 161mm x 15mm
• Gewicht: 482g
• ISBN-13: 9780691121765
• ISBN-10: 0691121761
• Artikelnr.: 21579410

Autorenporträt

Pavel P. Konorov is Professor of Physics at St. Petersburg State University and a member of the Russian Academy of Natural Sciences. Adil M. Yafyasov is Professor of Physics at St. Petersburg State University. Vladislav B. Bogevolnov is Associate Professor of Physics at St. Petersburg State University.

Inhaltsangabe

Preface vii
Abbreviations xi
Introduction xiii
CHAPTER ONE: Semiconductor-Electrolyte Interface: Basic Notions and
Definitions 1
CHAPTER TWO: Semiconductor-Electrolyte Interface under Polarization:
Voltage-Current Relationships (Polarization Characteristics) 7
CHAPTER THREE: Quasi-Equilibrium Field Effect in Semiconductor-Electrolyte
Interfaces: Studies of Surface States 15
3.1 QUASI-EQUILIBRIUM FESE 15
3.2 SURFACE STATES INDUCED BY GERMANIUM SURFACE OXIDATION 25
3.3 SURFACE STATES ARISING ON GERMANIUM BY METAL ADSORPTION 27
CHAPTER FOUR: Field Effect in Semiconductor-Electrolyte Interfaces on
Nonequilibrium Depletion of Free Charge Carriers from Semiconductor 30
CHAPTER FIVE: Application of Field Effect in Semiconductor-Electrolyte
Interfaces for Studies of Surface Charge Layer Characteristics of
Semiconductors and Semimetals 37
5.1 WIDE-GAP SEMICONDUCTORS 38
5.2 NARROW-GAP SEMICONDUCTORS 45
5.3 ZERO-GAP SEMICONDUCTORS AND SEMIMETALS 70
5.4 FESE TECHNIQUE AS APPLIED TO STUDIES OF SURFACES OF METAL ELECTRODES
AND HTSCMATERIALS 82
CHAPTER SIX: Processes of Spatial and Temporal Self-Organization in the
Semiconductor--Electrolyte System and Their Manifestation in the Field
Effect 88
6.1 PROCESSES UNDER POLARIZATION 88
6.2 PROCESSES UNDER ADSORPTION 94
6.3 QUASI-PERIODIC OSCILLATIONS IN THE CARBON FIBER--ELECTROLYTE SYSTEM 101
6.4 BELOUSOV-ZHABOTINSKY REACTION 105
CHAPTER SEVEN: Size Quantization in the Semiconductor-Electrolyte System
109
7.1 TWO-DIMENSIONAL QUANTUM SYSTEMS: THEORY 109
7.2 TWO-DIMENSIONAL SIZE QUANTIZATION IN SEMICONDUCTOR-ELECTROLYTE
INTERFACES AND ITS MANIFESTATION IN FESE EXPERIMENTS 114
7.3 ONE-DIMENSIONAL QUANTUM SYSTEM: THEORY 119
7.4 FABRICATION OF LOW-DIMENSIONAL QUANTUM STRUCTURES AND THEIR ELECTRONIC
PROPERTIES 121
CHAPTER EIGHT: Technique of FESE Method and Some Possibilities for Its
Technological Applications 136
8.1 TECHNIQUE OF QUASI-EQUILIBRIUM FESEMETHOD 136
8.2 APPLICATION OF FESE FOR CONTROL OF THE IMPURITY DISTRIBUTION IN
SEMICONDUCTORS 140
8.3 METHOD FOR DETERMINING THE STOICHIOMETRIC COMPOSITION OF SOLID
SOLUTIONS 141
8.4 FESE TECHNIQUE FOR INVESTIGATION AND CONTROL OF BIOLOGICAL SYSTEMS 147
Conclusion 153
Bibliography 155
Index 175