Hongxing Jiang

III-Nitride Semiconductors

Optical Properties I

• Gebundenes Buch

Produktbeschreibung

The first part of a comprehensive overview of fundamental optical properties of III-nitride semiconductors. All optoelectronic applications based on III-nitrides are due to their unique optical properties and characterizations of III-nitrides. Much information, which is critical to the design and improvement of optoelectronic devices based on III-nitrides has been obtained in the last several years. This is the first of a two part Volume in the series Optoelectronic Properties of Semiconductors and Superlattices.

Produktdetails

• Verlag: Taylor & Francis Ltd (Sales)
• Seitenzahl: 464
• Erscheinungstermin: 28. Juni 2002
• Englisch
• Abmessung: 233mm x 152mm x 30mm
• Gewicht: 694g
• ISBN-13: 9781560329725
• ISBN-10: 1560329726
• Artikelnr.: 22124994

Autorenporträt

Hongxing Jiang is a Professor in the Department of Physics, Kansas State University, Manhattan, Kansas. Omar Manasreh, is a Professor in the Department of Electrical & Computer Engineering, at The University of New Mexico, Albuquerque, New Mexico. He is also the editor for the series Optoelectronic Propertiesof Semiconductors and Superlattices.

Inhaltsangabe

Introduction
Chapter One: Time-resolved Photoluminescence Studies of III-Nitrides
Chapter Two: Time-resolved Raman Studies of Wide bandgap Wurtzite GaN
Chapter Three: Optical Properties of InGaN Based III-Nitride
Heterostructures
Chapter Four: Optical Properties of Homeopitaxial GaN
Chapter Five: Physics and Optical Properties of GaN/InGaN Quantum Wells
Chapter Six: Characterization of GaN and Related Alloys by Raman Scattering
Chapter Seven: Raman Studies of Wurtzite GaN and Related Compounds
Chapter Eight: Light Emission from Rare Earth Doped GaN