Influence of Temperature on Nanoscale Semiconductor Devices - Gana, Sulaiman Muhammad
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The book investigates the impact of temperature on electron transport in Double-Gate (DG) and Silicon-On-Insulator (SOI) MOSFETs using a quasi-ballistic transport model. By employing the NanoMOS simulation tool, the study examines key transport parameters such as drain current, electron velocity, 2D electron density, and channel resistance over a temperature range of 50K to 850K and varying doping concentrations. The results show that SOI MOSFETs outperform DG MOSFETs at higher temperatures and doping levels, offering better electron mobility and stronger on-state current. However, DG MOSFETs…mehr

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Produktbeschreibung
The book investigates the impact of temperature on electron transport in Double-Gate (DG) and Silicon-On-Insulator (SOI) MOSFETs using a quasi-ballistic transport model. By employing the NanoMOS simulation tool, the study examines key transport parameters such as drain current, electron velocity, 2D electron density, and channel resistance over a temperature range of 50K to 850K and varying doping concentrations. The results show that SOI MOSFETs outperform DG MOSFETs at higher temperatures and doping levels, offering better electron mobility and stronger on-state current. However, DG MOSFETs are more suitable for smaller channel lengths due to their superior on-state current at 10 nm. The findings suggest that temperature and doping concentration significantly influence MOSFET performance, providing insights into optimizing device design for high-performance applications.
Autorenporträt
Sulaiman Muhammad Gana is a dedicated academic and researcher specializing in electronics and nanotechnology. He holds a Ph.D. in Physics with a specialization in electronics from Bayero University, Kano, where he currently serves as a Senior Lecturer in the Department of Physics. He has received several awards, including commendations.