Mega-Bit Memory Technology - From Mega-Bit to Giga-Bit

From Mega-Bit to Giga-Bit
Herausgeber: Tango, Hiroyuki

• Gebundenes Buch

Produktbeschreibung

This book describes LSI process technology, and focuses on the rapid progress of state-of-the-art dynamic random access memory (DRAM) process technologies—the longstanding technology driver of Si ULSI—as they advance from the 1 Kbit to the Gbit DRAM era.

Produktdetails

• Verlag: CRC Press
• Seitenzahl: 312
• Erscheinungstermin: 2. Oktober 2019
• Englisch
• Abmessung: 222mm x 145mm x 20mm
• Gewicht: 526g
• ISBN-13: 9781138413955
• ISBN-10: 113841395X
• Artikelnr.: 58054970

Autorenporträt

Hiroyuki Tango

Inhaltsangabe

Preface to the Series
Preface
Contributors
1. MOS Device Technology/Hiroyuki Tango
1.1. Introduction
1.2. MOS device technology
1.3. Scaling law for lower sub
micron MOS devices
1.4. Toward Gbit and beyond
1.5. Si quantum devices
2. Memory Cell Technology/Hiroyuki Tango
2.1. Memory cell technology trend
2.2. Trench capacitor cells
2.3. Stacked capacitor cell
2.4. High e and ferroelectric films for the gigabit generation
3. Lithography/Masataka Miyamura
3.1. Introduction
3.2. Photolithography
3.3. Resist and resist process
3.4. EB lithography
3.5. X
ray lithography
4. Dry Etching/Makoto Sekine
4.1. Introduction
4.2. Basic etching hardware and process technologies
4.3. Emerging etching process technologies
5. Thin Film Insulator/Kikuo Yamabe
5.7. Introduction
5.2. Oxide breakdown defect
5.3. Trench corner oxidation
5.4. Fatigue breakdown
5.5. Polysilicon oxide
5.6. Trapping center
5.7. Stress induced leakage current
5.8. Summary
6. Impurity Doping/Kikuo Yamabe
6.1. Introduction
6.2. Impurity doping
6.3. Macroscopic diffusion mechanism
6.4. Microscopic diffusion mechanism
6.5. Point defect control technology
6.6. Summary
7. Metallization/Kyoichi Suguro
7.1. Gate electrodes
7.2. Source and drain contacts
7.3. Interconnects
7.4. Summary
8. Chemical Vapor Deposition (CVD)/Nobuo Hayasaka 196
8.1. Introduction
8.2. CVD of poly crystalline silicon
8.3. CVD of metals
8.4. CVD of insulators
9. Crystal Technology/Yoshiaki Matsusita
9.1. Introduction
9.2. Silicon crystal growth technology
9.3. Crystalline defect control
9.4. Epitaxial wafer
9.5. SOI technology
9.6. Hereafter subject of crystal technology
10. Process and Device Simulation/Tetsunori Wada
10.1. Introduction
10.2. Process simulation
10.3. Device simulation
10.4. Conclusion
11. SOI Technology/Makoto Yoshimi
11.1. History of SOI technology
11.2. Thin
film SOI structure
11.3. SOI substrate technology
11.4. Application to ULSI circuits
11.5. Summary
Index.