Presenting a comprehensive overview of the state of the art of micro- and nanoelectronics, this book covers the field from fundamental science and material properties to novel ways of making nanodevices. It explores silicon compounds and processes; discusses FD SOI devices and candidates for post-CMOS nanoelectronics; and describes the latest developments in carbon nanotubes, graphene, and iii-v device structures. Containing contributions from experts in industry and academia, the text examines emerging materials and device architecture alternatives with the potential to shape the future of nanotechnology.…mehr
Presenting a comprehensive overview of the state of the art of micro- and nanoelectronics, this book covers the field from fundamental science and material properties to novel ways of making nanodevices. It explores silicon compounds and processes; discusses FD SOI devices and candidates for post-CMOS nanoelectronics; and describes the latest developments in carbon nanotubes, graphene, and iii-v device structures. Containing contributions from experts in industry and academia, the text examines emerging materials and device architecture alternatives with the potential to shape the future of nanotechnology.
Tomasz Brozek is a technical fellow at PDF Solutions, San Jose, California, USA, where he is responsible for advanced silicon technology characterization, diagnostic methods development, and early yield ramp of integrated circuits. He holds an MS EE and a Ph.D in physics. His doctorate research at the Institute of Semiconductor Physics in Kiev, Ukraine focused on radiation effects and degradation in microelectronic MOS systems. Previously he taught and conducted research at Warsaw University of Technology, Poland and the University of California, Los Angeles, USA, and worked at Motorola R&D organizations in Texas and Arizona, USA.
Inhaltsangabe
SiGe BiCMOS Technology and Devices. Si Ge Interdiffusion, Dopant Diffusion, and Segregation in SiGe and SiGe:C Based Devices. SiC MOS Devices: N Passivation of Near Interface Defects. Fully Depleted Devices: FDSOI and FinFET. Fully Depleted SOI Technology Overview. FinFETs: Designing for New Logic Technology. Reliability Issues in Planar and Nonplanar (FinFET) Device Architectures. High Mobility Channels. 2 D InAs XOI FETs: Fabrication and Device Physics. Beyond CMOS Devices. Stateful STT MRAM Based Logic for Beyond Von Neumann Computing. Four State Hybrid Spintronics Straintronics for Ultralow Power Computing. Nanoionic Switches as Post CMOS Devices for Neuromorphic Electronics. Physics Based Compact Graphene Device Modeling. Carbon Nanotube Vertical Interconnects: Prospects and Challenges. Graphene Nanosheet as Ultrathin Barrier.
SiGe BiCMOS Technology and Devices. Si Ge Interdiffusion, Dopant Diffusion, and Segregation in SiGe and SiGe:C Based Devices. SiC MOS Devices: N Passivation of Near Interface Defects. Fully Depleted Devices: FDSOI and FinFET. Fully Depleted SOI Technology Overview. FinFETs: Designing for New Logic Technology. Reliability Issues in Planar and Nonplanar (FinFET) Device Architectures. High Mobility Channels. 2 D InAs XOI FETs: Fabrication and Device Physics. Beyond CMOS Devices. Stateful STT MRAM Based Logic for Beyond Von Neumann Computing. Four State Hybrid Spintronics Straintronics for Ultralow Power Computing. Nanoionic Switches as Post CMOS Devices for Neuromorphic Electronics. Physics Based Compact Graphene Device Modeling. Carbon Nanotube Vertical Interconnects: Prospects and Challenges. Graphene Nanosheet as Ultrathin Barrier.
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