The semiconductor industry is undergoing a transition from the use of standard CMOS silicon to novel device structures that include carbon nanotubes, graphene, quantum dots and III-V materials. A must-read for anyone serious about future nanofabrication technologies, this book addresses the state of the art in nano devices for electronics. It explores exciting opportunities in emerging materials that will take system performance beyond what is offered by traditional CMOS-based microelectronics. The text features contributions from top international experts from industry and academia. Topics…mehr
The semiconductor industry is undergoing a transition from the use of standard CMOS silicon to novel device structures that include carbon nanotubes, graphene, quantum dots and III-V materials. A must-read for anyone serious about future nanofabrication technologies, this book addresses the state of the art in nano devices for electronics. It explores exciting opportunities in emerging materials that will take system performance beyond what is offered by traditional CMOS-based microelectronics. The text features contributions from top international experts from industry and academia. Topics covered range from electrical propagation on carbon nanotubes to GaN HEMTs technology and applications.
Krzysztof Iniewski is managing R&D developments at Redlen Technologies, Inc., a start-up company in British Columbia, and is also an Executive Director of CMOS Emerging Teclmologies, Inc.
Inhaltsangabe
Section I: Semiconductor Materials Electrical Propagation on Carbon Nanotubes: From Electrodynamics to Circuit Models Monolithic Integration of Carbon Nanotubes and CMOS Facile, Scalable, and Ambient-Electrochemical Route for Titania Memristor Fabrication Spin Transport in Organic Semiconductors: A Brief Overview of the First Eight Years Section II: Silicon Devices and Technology SiGe BiCMOS Technology and Devices Ultimate FDSOI Multigate MOSFETs and Multibarrier Boosted Gate Resonant Tunneling FETs for a New High-Performance Low-Power Paradigm Development of 3D Chip Integration Technology Embedded Spin-Transfer-Torque MRAM Nonvolatile Memory Device: Resistive Random Access Memory DRAM Technology Monocrystalline Silicon Solar Cell Optimization and Modeling Radiation Effects on Silicon Devices Section III: Compound Semiconductor Devices and Technology GaN/InGaN Double Heterojunction Bipolar Transistors Using Direct-Growth Technology GaN HEMTs Technology and Applications Surface Treatment, Fabrication, and Performances of GaN-Based Metal-Oxide-Semiconductor High-Electron Mobility Transistors GaN-Based HEMTs on Large Diameter Si Substrate for Next Generation of High Power/High Temperature Devices GaAs HBT and Power Amplifier Design for Handset Terminals Resonant Tunneling and Negative Differential Resistance in III-Nitrides New Frontiers in Intersubband Optoelectronics Using III- Nitride Semiconductors
Section I: Semiconductor Materials Electrical Propagation on Carbon Nanotubes: From Electrodynamics to Circuit Models Monolithic Integration of Carbon Nanotubes and CMOS Facile, Scalable, and Ambient-Electrochemical Route for Titania Memristor Fabrication Spin Transport in Organic Semiconductors: A Brief Overview of the First Eight Years Section II: Silicon Devices and Technology SiGe BiCMOS Technology and Devices Ultimate FDSOI Multigate MOSFETs and Multibarrier Boosted Gate Resonant Tunneling FETs for a New High-Performance Low-Power Paradigm Development of 3D Chip Integration Technology Embedded Spin-Transfer-Torque MRAM Nonvolatile Memory Device: Resistive Random Access Memory DRAM Technology Monocrystalline Silicon Solar Cell Optimization and Modeling Radiation Effects on Silicon Devices Section III: Compound Semiconductor Devices and Technology GaN/InGaN Double Heterojunction Bipolar Transistors Using Direct-Growth Technology GaN HEMTs Technology and Applications Surface Treatment, Fabrication, and Performances of GaN-Based Metal-Oxide-Semiconductor High-Electron Mobility Transistors GaN-Based HEMTs on Large Diameter Si Substrate for Next Generation of High Power/High Temperature Devices GaAs HBT and Power Amplifier Design for Handset Terminals Resonant Tunneling and Negative Differential Resistance in III-Nitrides New Frontiers in Intersubband Optoelectronics Using III- Nitride Semiconductors
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