Next-Generation High-Speed Electronics and Optoelectronics
Volume 2
Herausgegeben:Acharyya, Aritra; Sarkar, Angsuman; Aleksandrova, Mariya
Next-Generation High-Speed Electronics and Optoelectronics
Volume 2
Herausgegeben:Acharyya, Aritra; Sarkar, Angsuman; Aleksandrova, Mariya
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This book offers an in-depth exploration of the latest advancements in high-speed electronics and optoelectronics, focusing on breakthrough technologies that drive faster data rates, lower power consumption, and improved system performance. Readers gain insights into advanced materials like graphene and black phosphorus, cutting-edge device architectures, and innovative circuit designs for gigahertz (GHz) and terahertz (THz) frequencies. With practical research and real-world applications, this book greatly benefits postgraduate students, academic researchers, and professionals working in…mehr
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This book offers an in-depth exploration of the latest advancements in high-speed electronics and optoelectronics, focusing on breakthrough technologies that drive faster data rates, lower power consumption, and improved system performance. Readers gain insights into advanced materials like graphene and black phosphorus, cutting-edge device architectures, and innovative circuit designs for gigahertz (GHz) and terahertz (THz) frequencies. With practical research and real-world applications, this book greatly benefits postgraduate students, academic researchers, and professionals working in telecommunications, photonics, and next-generation electronics systems.
Produktdetails
- Produktdetails
- Lecture Notes in Electrical Engineering 1511
- Verlag: Springer, Berlin; Springer
- Artikelnr. des Verlages: 89558411
- Erscheinungstermin: 23. Januar 2026
- Englisch
- Abmessung: 235mm x 155mm
- ISBN-13: 9789819544141
- ISBN-10: 9819544149
- Artikelnr.: 75572335
- Herstellerkennzeichnung
- Springer-Verlag GmbH
- Tiergartenstr. 17
- 69121 Heidelberg
- ProductSafety@springernature.com
- Lecture Notes in Electrical Engineering 1511
- Verlag: Springer, Berlin; Springer
- Artikelnr. des Verlages: 89558411
- Erscheinungstermin: 23. Januar 2026
- Englisch
- Abmessung: 235mm x 155mm
- ISBN-13: 9789819544141
- ISBN-10: 9819544149
- Artikelnr.: 75572335
- Herstellerkennzeichnung
- Springer-Verlag GmbH
- Tiergartenstr. 17
- 69121 Heidelberg
- ProductSafety@springernature.com
Dr. Aritra Acharyya is Assistant Professor in the Department of Electronics and Communication Engineering at Kalyani Government Engineering College, West Bengal, since July 2024. He previously served as Assistant Professor in the Department of ECE, Cooch Behar Government Engineering College, from May 2016 to July 2024. Born in 1986, he received his B.E. from IIEST Shibpur in 2007, M.Tech. from the Institute of Radio Physics and Electronics, University of Calcutta, in 2010, and Ph.D. from the same institute in 2016. His research interests include high-frequency semiconductor devices, nanostructures, semiconductor physics, transport phenomena, quantum mechanics, and optoelectronics. He has published 102 papers in peer-reviewed journals, 72 papers in national and international conference proceedings, and several book chapters. He has also authored and edited 14 books. Dr. Angsuman Sarkar is Professor and Head of Electronics and Communication Engineering at Kalyani Government Engineering College, West Bengal. He previously served at Jalpaiguri GEC and KGEC as Lecturer, Assistant, and Associate Professor for over 23 years. He earned his M.Tech. in VLSI and microelectronics and Ph.D. from Jadavpur University. His research focuses on short-channel effects of sub-100 nm MOSFETs and nano device modeling. He is Senior Member of IEEE, Fellow of IE(I) and IETE, Life Member of ISTE, and Former Chairman of IEEE EDS Kolkata Chapter. He has authored 6 books, 23 book chapters, 110 international journal papers, and 68 conference papers. Featured in the “World Ranking of Top 2% Scientists” in Nanoscience and Nanotechnology by Stanford University and Elsevier, he also serves on editorial boards and reviews for leading journals. Currently, he supervises 8 Ph.D. scholars and has guided 9 to completion. Dr. Mariya Aleksandrova is Associate Professor of Fabrication Technology of Electronics at the Department of Microelectronics, Technical University of Sofia. She received her master’s in electronic engineering in 2007 and Ph.D. in 2010, focusing on interface optimization in organic light-emitting devices. After five years as Assistant Professor, she became Associate Professor in 2015. Her research has evolved from flexible polymeric light-emitting devices to flexible and wearable electronics, energy harvesting, and thin-film supercapacitors integrated with PCBs. Since 2018, her group has emphasized energy harvesting technologies. She leads the laboratories “Thin-film Electronics,” “Photolithography,” and “Quality and Reliability in Automotive Electronics.” Dr. Aleksandrova has designed seven core curricula at the Faculty of Electronic Engineering and Technology, including courses on micro- and nanosystems, thin-film electronics, and energy harvesting technologies. She has contributed to numerous national and international projects and authored 3 books, 5 book chapters, and over 120 peer-reviewed papers.
Introduction to Next
Generation High
Speed Electronics and Optoelectronics (Vol. 2).
Emerging Devices and Materials.
Nanotechnology in Electronic Devices.
Bending Light through Time and Space: A Translational Symmetry Perspective on Entangled Anti
nodal Dynamics.
Translational Symmetry of Intermediate Nodes in Entangled Particles: A New Perspective on Quantum Communication.
Silicon Carbide
Based Triple
Metal GAA MOSFETs: Analytical Insights into Electrical and Analog Performance.
Enhanced Reliability Architecture for VLSI Systems Using IRMC Algorithm for Error Detection and Correction.
Enhanced Non
Line
of
Sight Scattering Channel Modelling for MIMO
Based Underwater Wireless Optical Communication.
A Cryogenically Robust Bandgap Reference with Sub
2 ppm/°C Temperature Coefficient and High PSRR for Space
Grade and Low
Temperature Power Management ICs.
High
Linearity Al0.3Ga0.7N/GaN HEMTs for Spectrum
Efficient Millimetre
wave (m
Wave) IoE Networks.
Design and Analysis of a Photonic Crystal Gas Sensor using Machine Learning Approach.
Hardware
Efficient VLSI Implementation of Self
Attention Transformers for Natural Language Processing.
Brief Overview of Transition Metal Dichalcogenides (TMDs) as an Anode Material for Rechargeable Batteries.
Radiation Response of InAs Quantum Well n
MOSFETs: Role of Geometry and Bias.
Generation High
Speed Electronics and Optoelectronics (Vol. 2).
Emerging Devices and Materials.
Nanotechnology in Electronic Devices.
Bending Light through Time and Space: A Translational Symmetry Perspective on Entangled Anti
nodal Dynamics.
Translational Symmetry of Intermediate Nodes in Entangled Particles: A New Perspective on Quantum Communication.
Silicon Carbide
Based Triple
Metal GAA MOSFETs: Analytical Insights into Electrical and Analog Performance.
Enhanced Reliability Architecture for VLSI Systems Using IRMC Algorithm for Error Detection and Correction.
Enhanced Non
Line
of
Sight Scattering Channel Modelling for MIMO
Based Underwater Wireless Optical Communication.
A Cryogenically Robust Bandgap Reference with Sub
2 ppm/°C Temperature Coefficient and High PSRR for Space
Grade and Low
Temperature Power Management ICs.
High
Linearity Al0.3Ga0.7N/GaN HEMTs for Spectrum
Efficient Millimetre
wave (m
Wave) IoE Networks.
Design and Analysis of a Photonic Crystal Gas Sensor using Machine Learning Approach.
Hardware
Efficient VLSI Implementation of Self
Attention Transformers for Natural Language Processing.
Brief Overview of Transition Metal Dichalcogenides (TMDs) as an Anode Material for Rechargeable Batteries.
Radiation Response of InAs Quantum Well n
MOSFETs: Role of Geometry and Bias.
Introduction to Next
Generation High
Speed Electronics and Optoelectronics (Vol. 2).
Emerging Devices and Materials.
Nanotechnology in Electronic Devices.
Bending Light through Time and Space: A Translational Symmetry Perspective on Entangled Anti
nodal Dynamics.
Translational Symmetry of Intermediate Nodes in Entangled Particles: A New Perspective on Quantum Communication.
Silicon Carbide
Based Triple
Metal GAA MOSFETs: Analytical Insights into Electrical and Analog Performance.
Enhanced Reliability Architecture for VLSI Systems Using IRMC Algorithm for Error Detection and Correction.
Enhanced Non
Line
of
Sight Scattering Channel Modelling for MIMO
Based Underwater Wireless Optical Communication.
A Cryogenically Robust Bandgap Reference with Sub
2 ppm/°C Temperature Coefficient and High PSRR for Space
Grade and Low
Temperature Power Management ICs.
High
Linearity Al0.3Ga0.7N/GaN HEMTs for Spectrum
Efficient Millimetre
wave (m
Wave) IoE Networks.
Design and Analysis of a Photonic Crystal Gas Sensor using Machine Learning Approach.
Hardware
Efficient VLSI Implementation of Self
Attention Transformers for Natural Language Processing.
Brief Overview of Transition Metal Dichalcogenides (TMDs) as an Anode Material for Rechargeable Batteries.
Radiation Response of InAs Quantum Well n
MOSFETs: Role of Geometry and Bias.
Generation High
Speed Electronics and Optoelectronics (Vol. 2).
Emerging Devices and Materials.
Nanotechnology in Electronic Devices.
Bending Light through Time and Space: A Translational Symmetry Perspective on Entangled Anti
nodal Dynamics.
Translational Symmetry of Intermediate Nodes in Entangled Particles: A New Perspective on Quantum Communication.
Silicon Carbide
Based Triple
Metal GAA MOSFETs: Analytical Insights into Electrical and Analog Performance.
Enhanced Reliability Architecture for VLSI Systems Using IRMC Algorithm for Error Detection and Correction.
Enhanced Non
Line
of
Sight Scattering Channel Modelling for MIMO
Based Underwater Wireless Optical Communication.
A Cryogenically Robust Bandgap Reference with Sub
2 ppm/°C Temperature Coefficient and High PSRR for Space
Grade and Low
Temperature Power Management ICs.
High
Linearity Al0.3Ga0.7N/GaN HEMTs for Spectrum
Efficient Millimetre
wave (m
Wave) IoE Networks.
Design and Analysis of a Photonic Crystal Gas Sensor using Machine Learning Approach.
Hardware
Efficient VLSI Implementation of Self
Attention Transformers for Natural Language Processing.
Brief Overview of Transition Metal Dichalcogenides (TMDs) as an Anode Material for Rechargeable Batteries.
Radiation Response of InAs Quantum Well n
MOSFETs: Role of Geometry and Bias.