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This book is about the synthesis,Characterization of high k nano materials like La2o3 ,LaAlo3 and simulation of device characteristics for future CMOS applications.Synthesis and characterization of La2O3 and LaAlO3 materials by chemical methods like combustion method, pechini method and gelation precipitation method. (ii) Simulation of device characteristics for La2O3 and LaAlO3 materials,for Metal Oxide Semiconductor Field Effect Transistors is done by Quantum wise and Nanohub simulation tools. Also design of Inverter, NAND, NOR gates are investigated for High K dielectric La2O3 gate…mehr

Produktbeschreibung
This book is about the synthesis,Characterization of high k nano materials like La2o3 ,LaAlo3 and simulation of device characteristics for future CMOS applications.Synthesis and characterization of La2O3 and LaAlO3 materials by chemical methods like combustion method, pechini method and gelation precipitation method. (ii) Simulation of device characteristics for La2O3 and LaAlO3 materials,for Metal Oxide Semiconductor Field Effect Transistors is done by Quantum wise and Nanohub simulation tools. Also design of Inverter, NAND, NOR gates are investigated for High K dielectric La2O3 gate materials (K=27) using Arizona State Universities Predictive Technology Models.
Autorenporträt
El Dr. Kalagadda Bikshalu obtuvo su doctorado en la JNTUH (Universidad de Tecnología de Jawaharlal Nehru) de Hyderabad, y su máster en Electrónica Digital y Sistemas de Comunicación y su licenciatura en Electrónica y Comunicaciones en la JNTU (Universidad de Tecnología de Jawaharlal Nehru) de Hyderabad. Actualmente trabaja como profesor adjunto en el Departamento de Electrónica y Comunicaciones de la KUCE&T (Universidad de Ciencia y Tecnología de Kakatiya), en la India. Sus intereses son los die