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75th Anniversary of the Transistor 75th anniversary commemorative volume reflecting the transistor's development since inception to current state of the art 75th Anniversary of the Transistor is a commemorative anniversary volume to celebrate the invention of the transistor. The anniversary volume was conceived by the IEEE Electron Devices Society (EDS) to provide comprehensive yet compact coverage of the historical perspectives underlying the invention of the transistor and its subsequent evolution into a multitude of integration and manufacturing technologies and applications. The…mehr
75th anniversary commemorative volume reflecting the transistor's development since inception to current state of the art
75th Anniversary of the Transistor is a commemorative anniversary volume to celebrate the invention of the transistor. The anniversary volume was conceived by the IEEE Electron Devices Society (EDS) to provide comprehensive yet compact coverage of the historical perspectives underlying the invention of the transistor and its subsequent evolution into a multitude of integration and manufacturing technologies and applications.
The book reflects the transistor's development since inception to the current state of the art that continues to enable scaling to very large-scale integrated circuits of higher functionality and speed. The stages in this evolution covered are in chronological order to reflect historical developments.
Narratives and experiences are provided by a select number of venerated industry and academic leaders, and retired veterans, of the semiconductor industry. 75th Anniversary of the Transistor highlights:
Historical perspectives of the state-of-the-art pre-solid-state-transistor world (pre-1947) leading to the invention of the transistor
Invention of the bipolar junction transistor (BJT) and analytical formulations by Shockley (1948) and their impact on the semiconductor industry
Large scale integration, Moore's Law (1965) and transistor scaling (1974), and MOS/LSI, including flash memories - SRAMs, DRAMs (1963), and the Toshiba NAND flash memory (1989)
Image sensors (1986), including charge-coupled devices, and related microsensor applications
With comprehensive yet succinct and accessible coverage of one of the cornerstones of modern technology, 75th Anniversary of the Transistor is an essential reference for engineers, researchers, and undergraduate students looking for historical perspective from leaders in the field.
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Autorenporträt
Arokia Nathan, PhD, formerly the Professor of Photonic Systems and Displays at the University of Cambridge, is currently a Bye Fellow and Graduate Tutor at Darwin College, Cambridge. Samar K. Saha, PhD, is an internationally recognized expert on IC device architecture, process and device simulation, and device modeling within the industry and academia. Ravi M. Todi, PhD, is well known in the semiconductor industry as a technical and business leader and currently serves as IEEE EDS President.
Inhaltsangabe
Editor Biography xiii
Preface xv
1 The First Quantum Electron Device 1 Leo Esaki
2 IEEE Electron Devices Society: A Brief History 3 Samar K. Saha
2.1 Introduction 3
2.2 Origins of EDS 4
2.3 Growth of EDS 6
2.4 Publications 10
2.5 Conferences 12
2.6 Awards and Recognition 14
2.7 Conclusion 14
3 Did Sir J.C. Bose Anticipate the Existence of p- and n-Type Semiconductors in His Coherer/Detector Experiments? 17 Prasanta Kumar Basu
3.1 Introduction 17
3.2 J.C. Bose: A Brief Biography 18
3.3 Bose's Work on Detectors 19
3.4 Mott's Remark 21
3.5 Understanding Semiconductors and Doping 21
3.6 Interpretation of Mott's Remark 23
3.7 Conclusion 25
4 The Point-Contact Transistor: A Revolution Begins 29 John M. Dallesasse and Robert B. Kaufman
4.1 Introduction 29
4.2 Background and Motivation 30
4.3 Inventors' Understanding How a Point-Contact Transistor Operates 31
4.4 Recreating the Point-Contact Transistor 33
4.5 Concluding Remarks 40
5 On the Shockley Diode Equation and Analytic Models for Modern Bipolar Transistors 43 T. H. Ning
5.1 Introduction 43
5.2 Adaptation of Shockley Diode Equation to Modern Bipolar Transistors 45
5.3 Modern Bipolar Transistors Structures 46
5.4 Analytic Models for Modern Bipolar Transistors 48
5.5 Discussion 49
6 Junction-Less Field Effect Transistors: The First Transistor to be Conceptualized 51 Mamidala Jagadesh Kumar and Shubham Sahay
6.1 Introduction 51
6.2 Structure and Operation 52
6.3 Salient Features of JLFETs 55
6.4 Challenges for JLFETs 58
6.5 Unconventional Applications of JL Architecture 59
6.6 Conclusions 61
7 The First MOSFET Design by J. Lilienfeld and a Long Journey to Its Implementation 65 Hiroshi Iwai
7.1 Introduction 65
7.2 Demand for the Development of the Solid-State Amplifier and Its Difficulty 66
7.3 Grid-Inserted MESFETs 68
7.4 Lilienfeld Patents for the MESFET and MOSFET 69
7.5 Necessary Conditions for Successful MOSFET Operation, and MOSFET Development Chronology 72
7.6 Status of the Semiconductor Physics at the Lilienfeld Period (in the 1920s) and Thereafter 73
7.7 Improvement of Si and Ge Material Quality and Discovery of the pn Junction in the 1940s 74
7.8 H. Welker's MISFET with Inversion Channel in 1945 75
7.9 Shockley's Group Study for MOSFET from 1945 to 1947 76
7.10 Technology Development in the 1950s Until the Successful MOSFET Operation in 1960 79
7.11 Success of MOSFET Operation by D. Kahng and M. Attala in 1960 81
7.12 After the First Successful Operation of the MOSFET 82
7.13 Summary and Conclusions 82
8 The Invention of the Self-Aligned Silicon Gate Process 89 Robert E. Kerwin
9 The Application of Ion Implantation to Device Fabrication: The Early Days 95 Alfred U. MacRae
9.1 Introduction 95
9.2 Device Fabrication 96
9.3 Summary 99
10 Evolution of the MOSFET: From Microns to Nanometers 101 Yuan Taur
