C. K Maiti, G. A Armstrong

Applications of Silicon-Germanium Heterostructure Devices (eBook, PDF)

• Format: PDF

Produktbeschreibung

Combining technology, device design and simulation, and applications, this book is the first to deal with the design and optimization of transistors made from strained layers. Topics include background theory of the HBT, device simulation that predicts the optimum HBT device structure for a particular application, compact SiGe-HBT models for RF applications and the SPICE parameter extraction, and the enhancement of the high-frequency performance of HFETs using MOSFET or MODFET structures. The book also covers the design and application of optoelectronic devices and assesses how SiGe technology competes with other alternative technologies in the RF wireless communications marketplace.

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Produktdetails

• Verlag: Taylor & Francis eBooks
• Seitenzahl: 402
• Erscheinungstermin: 20. Juli 2001
• Englisch
• ISBN-13: 9781420034691
• Artikelnr.: 53293691

Autorenporträt

C.K Maiti, G.A Armstrong

Inhaltsangabe

Introduction. Film Growth and Material Parameters. Principles of SiGe
HBTs. Design of SiGe
HBTs. Simulation of SiGe
HBTs. Strained
Si Heterostructure FETs. SiGe Heterostructure Schottky Diodes. SiGe Optoelectronic Devices. RF Applications of SiGe
HBTs