C. K Maiti, G. A Armstrong

Applications of Silicon-Germanium Heterostructure Devices (eBook, PDF)

• Format: PDF

Produktbeschreibung

The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book include key technology issues for the growth of st

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Produktdetails

• Verlag: Taylor & Francis eBooks
• Seitenzahl: 402
• Erscheinungstermin: 20. Juli 2001
• Englisch
• ISBN-13: 9781420034691
• Artikelnr.: 53293691

Autorenporträt

C.K Maiti, G.A Armstrong

Inhaltsangabe

Introduction. Film Growth and Material Parameters. Principles of SiGe
HBTs. Design of SiGe
HBTs. Simulation of SiGe
HBTs. Strained
Si Heterostructure FETs. SiGe Heterostructure Schottky Diodes. SiGe Optoelectronic Devices. RF Applications of SiGe
HBTs