· Enables readers to understand and model negative bias temperature instability, with an emphasis on dynamics;
· Includes coverage of DC vs. AC stress, duty factor dependence and bias dependence;
· Explains time dependent defect spectroscopy, as a measurement method that operates on nanoscale MOSFETs;
· Introduces new defect model for metastable defect states, nonradiative multiphonon theory and stochastic behavior.
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