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  • Format: PDF

By integrating technological features of crystal and epitaxial layer growth, physics of defect occurrence processes and procedures for eliminating their effects, and device engineering, this edition provides a comprehensive overview of the current state of research and existing approaches to mitigating defect-related limitations in SiC-based technologies.

  • Geräte: PC
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  • Größe: 12.35MB
Produktbeschreibung
By integrating technological features of crystal and epitaxial layer growth, physics of defect occurrence processes and procedures for eliminating their effects, and device engineering, this edition provides a comprehensive overview of the current state of research and existing approaches to mitigating defect-related limitations in SiC-based technologies.


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