Defects in Microelectronic Materials and Devices (eBook, ePUB)

Redaktion: Fleetwood, Daniel M.; Schrimpf, Ronald D.

• Format: ePub

Produktbeschreibung

Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.A comprehensive survey of defe

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Produktdetails

• Verlag: Taylor & Francis eBooks
• Seitenzahl: 770
• Erscheinungstermin: 19. November 2008
• Englisch
• ISBN-13: 9781040078501
• Artikelnr.: 72536611

Autorenporträt

Daniel M. Fleetwood, Sokrates T. Pantelides, Ronald D. Schrimpf

Inhaltsangabe

Defects in Ultra-Shallow Junctions. Hydrogen-Related Defects in Silicon,
Germanium, and Silicon-Germanium Alloys. Defects in Strained-Si MOSFETs.
The Effect of Defects on Electron Transport in Nanometer-Scale Electronic
Devices: Impurities and Interface Roughness. Electrical Characterization of
Defects in Gate Dielectrics. Dominating Defects in the MOS System: Pb and
E0 Centers. Oxide Traps, Border Traps, and Interface Traps in SiO2. From 3D
Imaging of Atoms to Macroscopic Device Properties. Defect Energy Levels in
HfO2 and Related High-K Gate Oxides. Spectroscopic Studies of Electrically
Active Defects in High-k Gate Dielectrics. Defects in CMOS Gate
Dielectrics. Negative Bias Temperature Instabilities in High-k Gate
Dielectrics. Defect Formation and Annihilation in Electronic Devices and
the Role of Hydrogen. Toward Engineering Modeling of Negative Bias
Temperature Instability. Wear-Out and Time-Dependent Dielectric Breakdown
in Silicon Oxides. Defects Associated with Dielectric Breakdown in
SiO2-Based Gate Dielectrics. Defects in Thin and Ultrathin Silicon
Dioxides. Structural Defects in SiO2-Si Caused by Ion Bombardment. Impact
of Radiation-Induced Defects on Bipolar Device Operation. Silicon
Dioxide-Silicon Carbide Interfaces: Current Status and Recent Advances.
Defects in SiC. Defects in Gallium Arsenide. Appendix: Selected High-Impact
Journal Articles on Defects in Microelectronic Materials and Devices.