Amit Chaudhry

Fundamentals of Nanoscaled Field Effect Transistors (eBook, PDF)

• Format: PDF

Produktbeschreibung

Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-¿ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.

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Produktdetails

• Verlag: Springer US
• Seitenzahl: 201
• Erscheinungstermin: 23. April 2013
• Englisch
• ISBN-13: 9781461468226
• Artikelnr.: 38440158

Inhaltsangabe

Scaling of a MOS Transistor.- Nanoscale Effects- Gate Oxide Leakage Currents.- Nanoscale Effects- Inversion Layer Quantization.- Dielectrics for Nanoelectronics.- Germanium Technology.- Biaxial s-Si Technology.- Uniaxial s-Si Technology.- Alternate MOS Structures.- Graphene Technology.