Handbook of Silicon Semiconductor Metrology (eBook, ePUB)
Redaktion: Diebold, Alain C.
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Handbook of Silicon Semiconductor Metrology (eBook, ePUB)
Redaktion: Diebold, Alain C.
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Containing more than 300 equations and nearly 500 drawings, photographs, and micrographs, this reference surveys key areas such as optical measurements and in-line calibration methods. It describes cleanroom-based measurement technology used during the manufacture of silicon integrated circuits and covers model-based, critical dimension, overlay
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Containing more than 300 equations and nearly 500 drawings, photographs, and micrographs, this reference surveys key areas such as optical measurements and in-line calibration methods. It describes cleanroom-based measurement technology used during the manufacture of silicon integrated circuits and covers model-based, critical dimension, overlay
Dieser Download kann aus rechtlichen Gründen nur mit Rechnungsadresse in A, B, BG, CY, CZ, D, DK, EW, E, FIN, F, GR, HR, H, IRL, I, LT, L, LR, M, NL, PL, P, R, S, SLO, SK ausgeliefert werden.
Produktdetails
- Produktdetails
- Verlag: Taylor & Francis eBooks
- Seitenzahl: 896
- Erscheinungstermin: 29. Juni 2001
- Englisch
- ISBN-13: 9781135554835
- Artikelnr.: 72536795
- Verlag: Taylor & Francis eBooks
- Seitenzahl: 896
- Erscheinungstermin: 29. Juni 2001
- Englisch
- ISBN-13: 9781135554835
- Artikelnr.: 72536795
- Herstellerkennzeichnung Die Herstellerinformationen sind derzeit nicht verfügbar.
Alain C. Diebold
Introduction - silicon semiconductor metrology. Part 1 Transistor
fabrication metrology: gate dielectric metrology; metrology for ion
implantation; MOS device characterization; carrier illumination
characterization of ultra-shallow implants;modelling of statistical
manufacturing sensitivity and of process control and metrology requirements
for a 0.18Mum NMOSFET. Part 2 On-chip interconnect metrology: overview of
metrology for on-chip interconnect; metrology for on-chip
interconnectdielectrics; thin film metrology using impulsive stimulated
thermal scattering (ISTS); metal interconnect process control using
picosecond ultrasonics; sheet resistance measurements of interconnect
films; characterization of low dielectric constantmaterials; high
resolution profilometry for CMP and etch metrology. Part 3 Lithography
metrology: critical dimension metrology in the scanning electron
microscope; scanned probe microscope dimensional metrology; electrical DC
metrology and relatedreference materials; metrology of image placement;
scatterometry for semiconductor metrology. Part 4 Defect detection and
characterization: unpatterned wafer defect detection; particle and defect
characterization; calibration of particle detectionsystems. Part 5 Sensor
based metrology: in-situ metrology. Part 6 Data management: metrology data
management and information systems. Part 7 Electrical measurement based
statistical metrology: statistical metrology. Part 8 Overviews of key
measurement andcalibration technology: physics of optical metrology of
silicon based semiconductor devices; UV, VUV and extreme UV spectroscopic
reflectometry and ellipsometry; analysis of thin layer structures by x-ray
reflectometry; ion beam methods; electronmicroscopy based measurement of
feature thickness and calibration of reference materials; status of
lithography at the end of 2000.
fabrication metrology: gate dielectric metrology; metrology for ion
implantation; MOS device characterization; carrier illumination
characterization of ultra-shallow implants;modelling of statistical
manufacturing sensitivity and of process control and metrology requirements
for a 0.18Mum NMOSFET. Part 2 On-chip interconnect metrology: overview of
metrology for on-chip interconnect; metrology for on-chip
interconnectdielectrics; thin film metrology using impulsive stimulated
thermal scattering (ISTS); metal interconnect process control using
picosecond ultrasonics; sheet resistance measurements of interconnect
films; characterization of low dielectric constantmaterials; high
resolution profilometry for CMP and etch metrology. Part 3 Lithography
metrology: critical dimension metrology in the scanning electron
microscope; scanned probe microscope dimensional metrology; electrical DC
metrology and relatedreference materials; metrology of image placement;
scatterometry for semiconductor metrology. Part 4 Defect detection and
characterization: unpatterned wafer defect detection; particle and defect
characterization; calibration of particle detectionsystems. Part 5 Sensor
based metrology: in-situ metrology. Part 6 Data management: metrology data
management and information systems. Part 7 Electrical measurement based
statistical metrology: statistical metrology. Part 8 Overviews of key
measurement andcalibration technology: physics of optical metrology of
silicon based semiconductor devices; UV, VUV and extreme UV spectroscopic
reflectometry and ellipsometry; analysis of thin layer structures by x-ray
reflectometry; ion beam methods; electronmicroscopy based measurement of
feature thickness and calibration of reference materials; status of
lithography at the end of 2000.
Introduction - silicon semiconductor metrology. Part 1 Transistor
fabrication metrology: gate dielectric metrology; metrology for ion
implantation; MOS device characterization; carrier illumination
characterization of ultra-shallow implants;modelling of statistical
manufacturing sensitivity and of process control and metrology requirements
for a 0.18Mum NMOSFET. Part 2 On-chip interconnect metrology: overview of
metrology for on-chip interconnect; metrology for on-chip
interconnectdielectrics; thin film metrology using impulsive stimulated
thermal scattering (ISTS); metal interconnect process control using
picosecond ultrasonics; sheet resistance measurements of interconnect
films; characterization of low dielectric constantmaterials; high
resolution profilometry for CMP and etch metrology. Part 3 Lithography
metrology: critical dimension metrology in the scanning electron
microscope; scanned probe microscope dimensional metrology; electrical DC
metrology and relatedreference materials; metrology of image placement;
scatterometry for semiconductor metrology. Part 4 Defect detection and
characterization: unpatterned wafer defect detection; particle and defect
characterization; calibration of particle detectionsystems. Part 5 Sensor
based metrology: in-situ metrology. Part 6 Data management: metrology data
management and information systems. Part 7 Electrical measurement based
statistical metrology: statistical metrology. Part 8 Overviews of key
measurement andcalibration technology: physics of optical metrology of
silicon based semiconductor devices; UV, VUV and extreme UV spectroscopic
reflectometry and ellipsometry; analysis of thin layer structures by x-ray
reflectometry; ion beam methods; electronmicroscopy based measurement of
feature thickness and calibration of reference materials; status of
lithography at the end of 2000.
fabrication metrology: gate dielectric metrology; metrology for ion
implantation; MOS device characterization; carrier illumination
characterization of ultra-shallow implants;modelling of statistical
manufacturing sensitivity and of process control and metrology requirements
for a 0.18Mum NMOSFET. Part 2 On-chip interconnect metrology: overview of
metrology for on-chip interconnect; metrology for on-chip
interconnectdielectrics; thin film metrology using impulsive stimulated
thermal scattering (ISTS); metal interconnect process control using
picosecond ultrasonics; sheet resistance measurements of interconnect
films; characterization of low dielectric constantmaterials; high
resolution profilometry for CMP and etch metrology. Part 3 Lithography
metrology: critical dimension metrology in the scanning electron
microscope; scanned probe microscope dimensional metrology; electrical DC
metrology and relatedreference materials; metrology of image placement;
scatterometry for semiconductor metrology. Part 4 Defect detection and
characterization: unpatterned wafer defect detection; particle and defect
characterization; calibration of particle detectionsystems. Part 5 Sensor
based metrology: in-situ metrology. Part 6 Data management: metrology data
management and information systems. Part 7 Electrical measurement based
statistical metrology: statistical metrology. Part 8 Overviews of key
measurement andcalibration technology: physics of optical metrology of
silicon based semiconductor devices; UV, VUV and extreme UV spectroscopic
reflectometry and ellipsometry; analysis of thin layer structures by x-ray
reflectometry; ion beam methods; electronmicroscopy based measurement of
feature thickness and calibration of reference materials; status of
lithography at the end of 2000.







