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Collection of selected, peer reviewed papers from the 2013 HeteroSiC-WASMPE, June 17-19, 2013, Nice, France.
The 25 papers are grouped as follows:
Chapter 1: 3C-SiC - Epitaxy, Characterization and Devices;
Chapter 2: 4H-SiC and 15R-SiC - Growth and Characterization;
Chapter 3: Related Materials - Gallium Nitride, Graphene and Silicon;
Chapter 4: SiC Devices and Device Processing

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Produktbeschreibung
Collection of selected, peer reviewed papers from the 2013 HeteroSiC-WASMPE, June 17-19, 2013, Nice, France.
The 25 papers are grouped as follows:
Chapter 1: 3C-SiC - Epitaxy, Characterization and Devices;
Chapter 2: 4H-SiC and 15R-SiC - Growth and Characterization;
Chapter 3: Related Materials - Gallium Nitride, Graphene and Silicon;
Chapter 4: SiC Devices and Device Processing


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