Internal photoemission involves the physics of charge carrier photoemission from one solid to another, and different spectroscopic applications of this phenomenon to solid state heterojunctions. This technique complements conventional external photoemission spectroscopy by analyzing interfaces separated from the sample surface by a layer of a different solid or liquid. Internal photoemission provides the most straightforward, reliable information regarding the energy spectrum of electron states at interfaces. At the same time, the method enables the analysis of heterostructures relevant to modern micro- and nano-electronic devices as well as new materials involved in their design and fabrication.
- First complete model description of the internal photoemission phenomena
- Overview of the most reliable energy barrier determination procedures and trap characterization methods
- Overview of the most recent results on band structure of high-permittivity insulating materials and their interfaces with semiconductors and metals
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