Mega-Bit Memory Technology - From Mega-Bit to Giga-Bit (eBook, ePUB)
From Mega-Bit to Giga-Bit
Redaktion: Tango, Hiroyuki
180,95 €
180,95 €
inkl. MwSt.
Sofort per Download lieferbar
90 °P sammeln
180,95 €
Als Download kaufen
180,95 €
inkl. MwSt.
Sofort per Download lieferbar
90 °P sammeln
Jetzt verschenken
Alle Infos zum eBook verschenken
180,95 €
inkl. MwSt.
Sofort per Download lieferbar
Alle Infos zum eBook verschenken
90 °P sammeln
Mega-Bit Memory Technology - From Mega-Bit to Giga-Bit (eBook, ePUB)
From Mega-Bit to Giga-Bit
Redaktion: Tango, Hiroyuki
- Format: ePub
- Merkliste
- Auf die Merkliste
- Bewerten Bewerten
- Teilen
- Produkt teilen
- Produkterinnerung
- Produkterinnerung

Bitte loggen Sie sich zunächst in Ihr Kundenkonto ein oder registrieren Sie sich bei
bücher.de, um das eBook-Abo tolino select nutzen zu können.
Hier können Sie sich einloggen
Hier können Sie sich einloggen
Sie sind bereits eingeloggt. Klicken Sie auf 2. tolino select Abo, um fortzufahren.

Bitte loggen Sie sich zunächst in Ihr Kundenkonto ein oder registrieren Sie sich bei bücher.de, um das eBook-Abo tolino select nutzen zu können.
This book describes LSI process technology, and focuses on the rapid progress of state-of-the-art dynamic random access memory (DRAM) process technologies-the longstanding technology driver of Si ULSI-as they advance from the 1 Kbit to the Gbit DRAM era.
- Geräte: eReader
- mit Kopierschutz
- eBook Hilfe
Andere Kunden interessierten sich auch für
- Mega-Bit Memory Technology - From Mega-Bit to Giga-Bit (eBook, PDF)180,95 €
- Bhavanari SatyanarayanaMathematical Foundations of Computer Science (eBook, ePUB)49,95 €
- Valery Ochkov25 Problems for STEM Education (eBook, ePUB)43,95 €
- Collective Intelligence (eBook, ePUB)52,95 €
- Hanky SjafrieIntroduction to Self-Driving Vehicle Technology (eBook, ePUB)49,95 €
- Richard J. RoigerJust Enough R! (eBook, ePUB)43,95 €
- Huifang SunDigital Video Transcoding for Transmission and Storage (eBook, ePUB)155,95 €
-
-
-
This book describes LSI process technology, and focuses on the rapid progress of state-of-the-art dynamic random access memory (DRAM) process technologies-the longstanding technology driver of Si ULSI-as they advance from the 1 Kbit to the Gbit DRAM era.
Dieser Download kann aus rechtlichen Gründen nur mit Rechnungsadresse in A, B, BG, CY, CZ, D, DK, EW, E, FIN, F, GR, HR, H, IRL, I, LT, L, LR, M, NL, PL, P, R, S, SLO, SK ausgeliefert werden.
Produktdetails
- Produktdetails
- Verlag: Taylor & Francis eBooks
- Seitenzahl: 310
- Erscheinungstermin: 16. Oktober 2019
- Englisch
- ISBN-13: 9781000673418
- Artikelnr.: 57928516
- Verlag: Taylor & Francis eBooks
- Seitenzahl: 310
- Erscheinungstermin: 16. Oktober 2019
- Englisch
- ISBN-13: 9781000673418
- Artikelnr.: 57928516
- Herstellerkennzeichnung Die Herstellerinformationen sind derzeit nicht verfügbar.
Hiroyuki Tango
Preface to the Series
Preface
Contributors
1. MOS Device Technology/Hiroyuki Tango
1.1. Introduction
1.2. MOS device technology
1.3. Scaling law for lower sub
micron MOS devices
1.4. Toward Gbit and beyond
1.5. Si quantum devices
2. Memory Cell Technology/Hiroyuki Tango
2.1. Memory cell technology trend
2.2. Trench capacitor cells
2.3. Stacked capacitor cell
2.4. High e and ferroelectric films for the gigabit generation
3. Lithography/Masataka Miyamura
3.1. Introduction
3.2. Photolithography
3.3. Resist and resist process
3.4. EB lithography
3.5. X
ray lithography
4. Dry Etching/Makoto Sekine
4.1. Introduction
4.2. Basic etching hardware and process technologies
4.3. Emerging etching process technologies
5. Thin Film Insulator/Kikuo Yamabe
5.7. Introduction
5.2. Oxide breakdown defect
5.3. Trench corner oxidation
5.4. Fatigue breakdown
5.5. Polysilicon oxide
5.6. Trapping center
5.7. Stress induced leakage current
5.8. Summary
6. Impurity Doping/Kikuo Yamabe
6.1. Introduction
6.2. Impurity doping
6.3. Macroscopic diffusion mechanism
6.4. Microscopic diffusion mechanism
6.5. Point defect control technology
6.6. Summary
7. Metallization/Kyoichi Suguro
7.1. Gate electrodes
7.2. Source and drain contacts
7.3. Interconnects
7.4. Summary
8. Chemical Vapor Deposition (CVD)/Nobuo Hayasaka 196
8.1. Introduction
8.2. CVD of poly crystalline silicon
8.3. CVD of metals
8.4. CVD of insulators
9. Crystal Technology/Yoshiaki Matsusita
9.1. Introduction
9.2. Silicon crystal growth technology
9.3. Crystalline defect control
9.4. Epitaxial wafer
9.5. SOI technology
9.6. Hereafter subject of crystal technology
10. Process and Device Simulation/Tetsunori Wada
10.1. Introduction
10.2. Process simulation
10.3. Device simulation
10.4. Conclusion
11. SOI Technology/Makoto Yoshimi
11.1. History of SOI technology
11.2. Thin
film SOI structure
11.3. SOI substrate technology
11.4. Application to ULSI circuits
11.5. Summary
Index.
Preface
Contributors
1. MOS Device Technology/Hiroyuki Tango
1.1. Introduction
1.2. MOS device technology
1.3. Scaling law for lower sub
micron MOS devices
1.4. Toward Gbit and beyond
1.5. Si quantum devices
2. Memory Cell Technology/Hiroyuki Tango
2.1. Memory cell technology trend
2.2. Trench capacitor cells
2.3. Stacked capacitor cell
2.4. High e and ferroelectric films for the gigabit generation
3. Lithography/Masataka Miyamura
3.1. Introduction
3.2. Photolithography
3.3. Resist and resist process
3.4. EB lithography
3.5. X
ray lithography
4. Dry Etching/Makoto Sekine
4.1. Introduction
4.2. Basic etching hardware and process technologies
4.3. Emerging etching process technologies
5. Thin Film Insulator/Kikuo Yamabe
5.7. Introduction
5.2. Oxide breakdown defect
5.3. Trench corner oxidation
5.4. Fatigue breakdown
5.5. Polysilicon oxide
5.6. Trapping center
5.7. Stress induced leakage current
5.8. Summary
6. Impurity Doping/Kikuo Yamabe
6.1. Introduction
6.2. Impurity doping
6.3. Macroscopic diffusion mechanism
6.4. Microscopic diffusion mechanism
6.5. Point defect control technology
6.6. Summary
7. Metallization/Kyoichi Suguro
7.1. Gate electrodes
7.2. Source and drain contacts
7.3. Interconnects
7.4. Summary
8. Chemical Vapor Deposition (CVD)/Nobuo Hayasaka 196
8.1. Introduction
8.2. CVD of poly crystalline silicon
8.3. CVD of metals
8.4. CVD of insulators
9. Crystal Technology/Yoshiaki Matsusita
9.1. Introduction
9.2. Silicon crystal growth technology
9.3. Crystalline defect control
9.4. Epitaxial wafer
9.5. SOI technology
9.6. Hereafter subject of crystal technology
10. Process and Device Simulation/Tetsunori Wada
10.1. Introduction
10.2. Process simulation
10.3. Device simulation
10.4. Conclusion
11. SOI Technology/Makoto Yoshimi
11.1. History of SOI technology
11.2. Thin
film SOI structure
11.3. SOI substrate technology
11.4. Application to ULSI circuits
11.5. Summary
Index.
Preface to the Series
Preface
Contributors
1. MOS Device Technology/Hiroyuki Tango
1.1. Introduction
1.2. MOS device technology
1.3. Scaling law for lower sub
micron MOS devices
1.4. Toward Gbit and beyond
1.5. Si quantum devices
2. Memory Cell Technology/Hiroyuki Tango
2.1. Memory cell technology trend
2.2. Trench capacitor cells
2.3. Stacked capacitor cell
2.4. High e and ferroelectric films for the gigabit generation
3. Lithography/Masataka Miyamura
3.1. Introduction
3.2. Photolithography
3.3. Resist and resist process
3.4. EB lithography
3.5. X
ray lithography
4. Dry Etching/Makoto Sekine
4.1. Introduction
4.2. Basic etching hardware and process technologies
4.3. Emerging etching process technologies
5. Thin Film Insulator/Kikuo Yamabe
5.7. Introduction
5.2. Oxide breakdown defect
5.3. Trench corner oxidation
5.4. Fatigue breakdown
5.5. Polysilicon oxide
5.6. Trapping center
5.7. Stress induced leakage current
5.8. Summary
6. Impurity Doping/Kikuo Yamabe
6.1. Introduction
6.2. Impurity doping
6.3. Macroscopic diffusion mechanism
6.4. Microscopic diffusion mechanism
6.5. Point defect control technology
6.6. Summary
7. Metallization/Kyoichi Suguro
7.1. Gate electrodes
7.2. Source and drain contacts
7.3. Interconnects
7.4. Summary
8. Chemical Vapor Deposition (CVD)/Nobuo Hayasaka 196
8.1. Introduction
8.2. CVD of poly crystalline silicon
8.3. CVD of metals
8.4. CVD of insulators
9. Crystal Technology/Yoshiaki Matsusita
9.1. Introduction
9.2. Silicon crystal growth technology
9.3. Crystalline defect control
9.4. Epitaxial wafer
9.5. SOI technology
9.6. Hereafter subject of crystal technology
10. Process and Device Simulation/Tetsunori Wada
10.1. Introduction
10.2. Process simulation
10.3. Device simulation
10.4. Conclusion
11. SOI Technology/Makoto Yoshimi
11.1. History of SOI technology
11.2. Thin
film SOI structure
11.3. SOI substrate technology
11.4. Application to ULSI circuits
11.5. Summary
Index.
Preface
Contributors
1. MOS Device Technology/Hiroyuki Tango
1.1. Introduction
1.2. MOS device technology
1.3. Scaling law for lower sub
micron MOS devices
1.4. Toward Gbit and beyond
1.5. Si quantum devices
2. Memory Cell Technology/Hiroyuki Tango
2.1. Memory cell technology trend
2.2. Trench capacitor cells
2.3. Stacked capacitor cell
2.4. High e and ferroelectric films for the gigabit generation
3. Lithography/Masataka Miyamura
3.1. Introduction
3.2. Photolithography
3.3. Resist and resist process
3.4. EB lithography
3.5. X
ray lithography
4. Dry Etching/Makoto Sekine
4.1. Introduction
4.2. Basic etching hardware and process technologies
4.3. Emerging etching process technologies
5. Thin Film Insulator/Kikuo Yamabe
5.7. Introduction
5.2. Oxide breakdown defect
5.3. Trench corner oxidation
5.4. Fatigue breakdown
5.5. Polysilicon oxide
5.6. Trapping center
5.7. Stress induced leakage current
5.8. Summary
6. Impurity Doping/Kikuo Yamabe
6.1. Introduction
6.2. Impurity doping
6.3. Macroscopic diffusion mechanism
6.4. Microscopic diffusion mechanism
6.5. Point defect control technology
6.6. Summary
7. Metallization/Kyoichi Suguro
7.1. Gate electrodes
7.2. Source and drain contacts
7.3. Interconnects
7.4. Summary
8. Chemical Vapor Deposition (CVD)/Nobuo Hayasaka 196
8.1. Introduction
8.2. CVD of poly crystalline silicon
8.3. CVD of metals
8.4. CVD of insulators
9. Crystal Technology/Yoshiaki Matsusita
9.1. Introduction
9.2. Silicon crystal growth technology
9.3. Crystalline defect control
9.4. Epitaxial wafer
9.5. SOI technology
9.6. Hereafter subject of crystal technology
10. Process and Device Simulation/Tetsunori Wada
10.1. Introduction
10.2. Process simulation
10.3. Device simulation
10.4. Conclusion
11. SOI Technology/Makoto Yoshimi
11.1. History of SOI technology
11.2. Thin
film SOI structure
11.3. SOI substrate technology
11.4. Application to ULSI circuits
11.5. Summary
Index.