New Insulators Devices and Radiation Effects (eBook, PDF)

• Format: PDF

Produktbeschreibung

Silicon technology today forms the basis of a world-wide, multi-billion dollar component industry. The reason for this expansion can be found not only in the physical properties of silicon but also in the unique properties of the silicon-silicon dioxide interface. However, silicon devices are still subject to undesired electrical phenomena called "instabilities". These are due mostly to the imperfect nature of the insulators used, to the not-so-perfect silicon-insulator interface and to the generation of defects and ionization phenomena caused by radiation.The problem of instabilities is addressed in this volume, the third of this book series.Vol.3 updates and supplements the material presented in the previous two volumes, and devotes five chapters to the problems of radiation-matter and radiation-device interactions. The volume will aid circuit manufacturers and circuit users alike to relate unstable electrical parameters and characteristics to the presence of physical defects and impurities or to the radiation environment which caused them.

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Produktdetails

• Verlag: Elsevier Science & Techn.
• Seitenzahl: 967
• Erscheinungstermin: 11. Februar 1999
• Englisch
• ISBN-13: 9780080534763
• Artikelnr.: 38118096

Inhaltsangabe

Part I - Additions and Updates to Volumes 1 & 2. Silica, silicon nitride
and oxynitride thin films - an overview of fabrication techniques,
properties and applications (B. Balland, A. Glachant). A review of buried
oxide structures and soi technologies (J.L. Leray). Dielectric breakdown in
silica - a survey of test methods (D.R. Wolters, J.F. Verwey, T.A.
Zegers-Van Duijnhoven). Hot carrier injections in silica and related
instabilities in submicrometer mosfets (D. Vuillaume). Multilayer
dielectrics for memory applications ((P. Gentil). Charge pumping techniques
- their use for diagnosis and interface state studies in MOS transistors
((J.L. Autran, B. Balland, G. Barbottin). The study of thermal nitridation
and reoxidation mechanisms using isotopic tracing methods (J.J. Ganem, I.J.
Baumvol). Part II - Silicon Devices in Radiation Environments. The space
radiation environment (D. Bräunig). An overview of radiation-matter
interactions (W.R. Fahrner). Radiation effects in electronic components (D.
Bräunig, F. Wulf). Defects and radiation - induced charge trapping
phenomena in silica (P. Pailet, J.L. Leray). The effects of cosmic ions on
electronic components (O. Musseau). Author index. Subject index.