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Previous edition already in use for courses in numerous physics, electrical engineering and materials science departments. This long-awaited new edition will be welcomed by students and researchers alike.
Previous edition already in use for courses in numerous physics, electrical engineering and materials science departments. This long-awaited new edition will be welcomed by students and researchers alike.
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Autorenporträt
Winfried Mönch received a Dr.rer.nat. degree from the Georg-August-University of Göttingen in 1961. He spent three years in the Semiconductor Department of the AEG Research Institute Frankfurt-Main before moving to the RWTH Aachen University. There he was awarded the venia legendi for physics in 1968 and became an Associate Professor two years later. In 1974 he was appointed Professor at the University of Duisburg (since 2003 University of Duisburg-Essen) and retired in 1999. He was the first Walter Schottky Visiting Professor at Stanford University in 1981 and received the E.W. Müller Award 1984 from the University of Wisconsin-Milwaukee. He has authored two monographs on semiconductor surfaces and interfaces, which have been published in the Springer Series in Surface Sciences.
Inhaltsangabe
1. Introduction.- 2. Surface Space-Charge Region in Thermal Equilibrium.- 3. Surface States.- 4. Occupation of Surface States and Surface Band-Bending in Thermal Equilibrium.- 5. Surface S pace-Charge Region in Non-Equilibrium.- 6. Interface States.- 7. Cleaved {110} Surfaces of III-V and II-VI Compound Semiconductors.- 8. {100} Surfaces of III-V, II-VI, and I-VII Compound Semiconductors with Zincblende Structure.- 9. {100} Surfaces of Diamond, Silicon, Germanium, and Cubic Silicon Carbide.- 10. Diamond, Silicon, and Germanium {111}-2 × 1 Surfaces.- 11. Si(111)-7 × 7 and Ge(111)-c(2 × 8) Surfaces.- 12. Phase Transitions on Silicon and Germanium {111} Surfaces.- 13. {111} Surfaces of Compounds with Zincblende Structure.- 14. Monovalent Adatoms.- 15. Group-III Adatoms on Silicon Surfaces.- 16. Group-V Adatoms.- 17. Oxidation of Silicon and III-V Compound Semiconductors.- 18. Surface Passivation by Adsorbates and Surfactants.- 19. Semiconductor Interfaces.- References.- Index of Reconstructions and Adsorbates.
1. Introduction.- 2. Surface Space-Charge Region in Thermal Equilibrium.- 3. Surface States.- 4. Occupation of Surface States and Surface Band-Bending in Thermal Equilibrium.- 5. Surface S pace-Charge Region in Non-Equilibrium.- 6. Interface States.- 7. Cleaved {110} Surfaces of III-V and II-VI Compound Semiconductors.- 8. {100} Surfaces of III-V, II-VI, and I-VII Compound Semiconductors with Zincblende Structure.- 9. {100} Surfaces of Diamond, Silicon, Germanium, and Cubic Silicon Carbide.- 10. Diamond, Silicon, and Germanium {111}-2 × 1 Surfaces.- 11. Si(111)-7 × 7 and Ge(111)-c(2 × 8) Surfaces.- 12. Phase Transitions on Silicon and Germanium {111} Surfaces.- 13. {111} Surfaces of Compounds with Zincblende Structure.- 14. Monovalent Adatoms.- 15. Group-III Adatoms on Silicon Surfaces.- 16. Group-V Adatoms.- 17. Oxidation of Silicon and III-V Compound Semiconductors.- 18. Surface Passivation by Adsorbates and Surfactants.- 19. Semiconductor Interfaces.- References.- Index of Reconstructions and Adsorbates.
Rezensionen
From the reviews of the third edition: "The monograph covers comprehensively experimental and theoretical methods to study semiconductor surfaces and interfaces. These research topics include aspects of physics, chemistry as well as of electronic devices, and are a very rapidly developing scientific area. The book includes more than 1500 references and is divided into nineteen chapters. The book is the third revised edition ... ." (I. A. Parinov, Zentralblatt MATH, Vol. 994 (19), 2002)
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