72,95 €
72,95 €
inkl. MwSt.
Sofort per Download lieferbar
payback
36 °P sammeln
72,95 €
72,95 €
inkl. MwSt.
Sofort per Download lieferbar

Alle Infos zum eBook verschenken
payback
36 °P sammeln
Als Download kaufen
72,95 €
inkl. MwSt.
Sofort per Download lieferbar
payback
36 °P sammeln
Jetzt verschenken
72,95 €
inkl. MwSt.
Sofort per Download lieferbar

Alle Infos zum eBook verschenken
payback
36 °P sammeln
  • Format: PDF

With the lowest resistivity of all metals, silver is an attractive interconnect material for higher current densities and faster switching speeds in integrated circuits. Over the past ten years, extensive research has been conducted to address the thermal and electrical stability issues and the processing issues that have prevented silver from being used as an interconnect metal. Here is the first book to discuss the current understanding of silver metallization and its potential as a future interconnect material for integrated circuit technology. The authors provide details on a wide range of…mehr

Produktbeschreibung
With the lowest resistivity of all metals, silver is an attractive interconnect material for higher current densities and faster switching speeds in integrated circuits. Over the past ten years, extensive research has been conducted to address the thermal and electrical stability issues and the processing issues that have prevented silver from being used as an interconnect metal. Here is the first book to discuss the current understanding of silver metallization and its potential as a future interconnect material for integrated circuit technology. The authors provide details on a wide range of experimental, characterization, and analysis techniques. In addition, they discuss novel approaches used to overcome the thermal and electrical stability issues associated with silver metallization. The book is written for students, scientists, engineers, and technologists in the fields of integrated circuits and microelectronics research and development.


Dieser Download kann aus rechtlichen Gründen nur mit Rechnungsadresse in A, B, BG, CY, CZ, D, DK, EW, E, FIN, F, GR, HR, H, IRL, I, LT, L, LR, M, NL, PL, P, R, S, SLO, SK ausgeliefert werden.

Autorenporträt
James W. Mayer is the Galvin Professor of Science and Engineering and Regents Professor at Arizona State University. He has investigated thin film phenomena and metallization for integrated circuits over the past two decades. Previously he was the F.N. Bard Professor of Materials Science at Cornell University and before this, Professor of Electrical Engineering at the California Institute of Technology. He received his Ph.D. in Physics at Purdue University and was a member of the technical staff at Hughes Research Laboratories. He is known for his work on nuclear particle detectors and Rutherford backscattering analysis. He is a Fellow of the IEEE and the American Physical Society and a member of the National Academy of Engineering.

Terry L. Alford is a professor of materials engineering in the Department of Chemical and Materials Engineering at Arizona State University. Dr Alford received his Ph.D. from Cornell University and was previously employed by Texas Instruments. He has had extensive consulting experience with Philips Semiconductors, Freescale Semiconductors, and Motorola. He has published extensively on the properties of thin films and the use of analysis techniques to characterize the films.

Daniel Adams is a professor of physics in the Department of Physics at the University of the Western Cape, South Africa. He has extensively investigated silver and copper metallization for the past ten years. Dr Adams received his PhD in Materials Engineering from Arizona State University, USA.

Rezensionen
From the reviews:
"This book is aimed at addressing and reviewing the engineering aspects of improving the thermal and electrical stability of silver with a view to use as an interconnect material in integrated circuits. ... this book can provide a quick overview of the state of the art, current trends and hurdles yet to be overcome." (Contemporary Physics, Vol. 51 (6), 2010)