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The relentless advancement in high-power electronics has driven the need for innovative materials and new device architectures. This special edition delves readers into the cutting-edge developments and challenges in the field, with a focus on silicon carbide (SiC) technology. The edition provides a comprehensive overview of the critical aspects of SiC MOSFETs, highlighting their superior switching characteristics and robustness, etc., compared to traditional silicon-based devices. Collected articles not only focus on the theoretical underpinnings but also provide practical insights for engineers in design and real-world applications.
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